Method of fabricating semiconductor device

Details Method of fabricating semiconductor device Method of fabricating semiconductor device

1997-12-15

2000-08-08

Dang, Trung

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Recessed oxide by localized oxidation

H01L 2176

Patent

active

061001643

ABSTRACT:
A semiconductor device and a method of fabricating the same are disclosed. The method includes the steps of forming an anti-oxidation layer on a substrate, forming an oxidizable layer on portions of the anti-oxidation layer to expose a portion of the anti-oxidation layer, varying a size of the exposed portion of the anti-oxidation layer by oxidizing at least a portion of the oxidizable layer, and forming a trench in the substrate according to the size of the exposed portion of the anti-oxidation layer. The semiconductor device includes an anti-oxidation layer formed on a substrate an oxidation layer formed on portions of the anti-oxidation layer by oxidizing at least a portion of an oxidizable layer, so as to define an isolation region of the semiconductor device, a trench formed in the substrate using the oxidation layer, and a field oxide layer formed in the trench.

REFERENCES:
patent: 3961999 (1976-06-01), Antipov
patent: 5208181 (1993-05-01), Chi
patent: 5393692 (1995-02-01), Wu
patent: 5403770 (1995-04-01), Jang
patent: 5834358 (1998-11-01), Pan et al.
patent: 5891789 (1999-04-01), Lee

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