Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1992-04-22
1994-01-18
Dang, Thi
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156662, 134 33, 134902, 252 791, H01L 2100
Patent
active
052797040
ABSTRACT:
A wafer comprising a GaAs substrate and an AlGaAs layer deposited thereon is rotated in a spin etching process. To the GaAs substrate of the rotating wafer, there is supplied an ammoniacal etching solution for selectively etching the GaAs substrate to form a groove therein. The ammoniacal etching solution comprises a mixture of hydrogen peroxide and aqueous ammonia, the volume ratio of hydrogen peroxide and aqueous ammonia being in the range from about 20 to 60. While the GaAs substrate is being selectively etched by the ammoniacal solution, the rotational speed of the wafer is progressively increased stepwise or continuously. The etching solution whose volume ratio of hydrogen peroxide and aqueous ammonia is in the range from about 20 to 60 is suitable for the formation of a deep groove in the GaAs substrate. The rotational speed of the GaAs substrate is progressively increased stepwise or continuously to progressively increase centrifugal forces applied to the GaAs substrate for thereby expelling a substance, which is generated in reaction with the etching solution, off the GaAs substrate. Since such a substance is prevented from being deposited on the GaAs substrate, the etching process progresses uniformly without an etching failure.
REFERENCES:
patent: 3936855 (1976-02-01), Goell et al.
patent: 3972770 (1976-08-01), Stein
patent: 4027686 (1977-06-01), Shortes et al.
patent: 4544446 (1985-10-01), Cady
patent: 4732785 (1988-03-01), Brewer
patent: 4856456 (1989-08-01), Hillman et al.
patent: 4871417 (1989-10-01), Nishizawa et al.
patent: 5032217 (1991-07-01), Tanaka
patent: 5122481 (1992-06-01), Nishiguchi
J. J. LePore, "An Improved Technique for Selective Etching of GaAs and Ga.sub.1-x Al.sub.x As", J. Appl. Phys., pp. 6441-6442, vol. 51, No. 12, Dec. 1980.
Hok et al., "Batch Fabrication of Micromechanical Elements in GaAs-Al.sub.x Ga.sub.1-x As", Sensors and Actuators, pp. 341-348, vol. 4, 1983.
Howes et al., Gallium Arsenide, , pp. 124-127, published by John Wiley & Sons, 1985.
Sakuta et al., "The Selective Chemical Etching Technique to Isolate Al.sub.x Ga.sub.1-x As Layers from GaAs Layers", The Technical Reports on the Meeting of Technical Group on Semiconductors & Semiconductor Devices, pp. 9-17, Feb. 25, 1974.
Kelly Kenefick, "Selective Etching Characteristics of Peroxide/Ammonium-Hydroxide Solutions for GaAs/Al.sub.0.16 Ga.sub.0.84 As", J. Electrochem. Soc.: Solid-State Science and Technology, pp. 2380-2382, vol. 129, No. 10, Oct. 1982.
Dang Thi
Honda Giken Kogyo Kabushiki Kaisha
LandOfFree
Method of fabricating semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of fabricating semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1134087