Method of fabricating semiconductor device

Details Method of fabricating semiconductor device Method of fabricating semiconductor device

1996-04-10

1998-03-17

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

438518, H01L 21338

Patent

active

057286116

ABSTRACT:
A method of producing a semiconductor device includes preparing a semiconductor ingot having a (100) surface orientation and an orientation which is obtained by tilting the (100) surface by an angle .theta. about angle .phi. with the center of the (100) surface as an axis of the rotation, thereby producing a semiconductor wafer having a surface; producing a channel region in the semiconductor wafer; producing a refractory metal gate on the surface of the semiconductor wafer; and using the refractory metal gate as a mask, implanting dopant impurity ions into the semiconductor wafer in a direction perpendicular to the surface of the semiconductor wafer, thereby producing impurity-implanted regions in the semiconductor wafer. Channeling is prevented and the short-channel effect is suppressed.

REFERENCES:
patent: 4771012 (1988-09-01), Yabu et al.
patent: 5471073 (1995-11-01), Kohno
VanVlack, "Elements of Materials Science and Engineering", Addison-Wesley Publishing Company, pp. 84-89, 1989.

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