Method of fabricating semiconductor device

Details Method of fabricating semiconductor device Method of fabricating semiconductor device

1998-06-08

1999-12-07

Monin, Donald

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Making plural separate devices

438113, 438122, 438462, 438464, 438465, H01L 2324

Patent

active

059982381

ABSTRACT:
A method of fabricating a semiconductor device includes forming a first chip separating groove such that its depth is less than the total depth of the wafer, forming a first metallization layer inside the first chip separating groove, thinning the wafer, forming a second chip separating groove in a region opposite the first chip separating groove of the rear surface of the wafer so that the wafer is separated into a plurality of semiconductor chips, forming metallization layer inside the second chip separating groove, forming a PHS layer on the entire rear surface of the wafer, and cutting the wafer at the chip separating groove, thereby producing a semiconductor device. The burr produced when the wafer is cut does not protrude from the rear surface of the wafer, assuring good adhesion between the semiconductor chip and a chip carrier, realizing a semiconductor device of a good heat dispersion characteristic and, therefore, of high reliability.

REFERENCES:
patent: 5037782 (1991-08-01), Nakamura et al.
patent: 5275958 (1994-01-01), Ishikawa
patent: 5302554 (1994-04-01), Kashiwa et al.
patent: 5338967 (1994-08-01), Kosaki
patent: 5362678 (1994-11-01), Komaru et al.
patent: 5457072 (1995-10-01), Tamaki et al.

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