Method of fabricating semiconductor device

Details Method of fabricating semiconductor device Method of fabricating semiconductor device

2009-03-26

2011-11-22

Hassanzadeh, Parviz (Department: 1716)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C216S041000, C216S046000, C438S696000, C438S705000

Reexamination Certificate

active

08062980

ABSTRACT:
A method of fabricating a semiconductor device according to one embodiment includes: forming a core material on a workpiece; forming a coating film comprising an amorphous material so as to cover an upper surface and side faces of the core material; crystallizing the coating film by applying heat treatment; forming a sidewall mask by removing the crystallized coating film while leaving a portion thereof located on the side faces of the core material; removing the core material after forming the sidewall mask; and etching the workpiece using the sidewall mask as a mask after removing the core material.

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Chang et al. “A simple spacer technique to fabricate poly-Si TFTs with 50 nm nanowire channels.” Nov. 2007, IEEE Electron Device Letters, vol. 28 No. 11, 993-995.
Miura et al. “Crystallization-induced stress in silicon thin films.” Jun. 1, 1992 Appl. Phys. Lett., 60(22) 2746-2748.

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