Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Fluid growth from gaseous state combined with subsequent...
Reexamination Certificate
2009-03-10
2011-10-25
Smith, Matthew (Department: 2823)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Fluid growth from gaseous state combined with subsequent...
C438S482000, C438S485000
Reexamination Certificate
active
08043945
ABSTRACT:
A method of fabricating a semiconductor device according to one embodiment includes: exposing a surface of a semiconductor substrate to a halogen-containing gas that contains at least one of Si and Ge, the semiconductor substrate being provided with a member comprising an oxide and consisting mainly of Si; and exposing the surface of the semiconductor substrate to an atmosphere containing at least one of a Si-containing gas not containing halogen and a Ge-containing gas not containing halogen after starting exposure of the surface of the semiconductor substrate to the halogen-containing gas, thereby epitaxially growing a crystal film containing at least one of Si and Ge on the surface.
REFERENCES:
patent: 4579621 (1986-04-01), Hine
patent: 5864161 (1999-01-01), Mitani et al.
patent: 6217650 (2001-04-01), Hirose et al.
patent: 6395621 (2002-05-01), Mizushima et al.
patent: 6617226 (2003-09-01), Suguro et al.
patent: 7122864 (2006-10-01), Nagano et al.
patent: 7202142 (2007-04-01), Lee et al.
patent: 7682940 (2010-03-01), Ye et al.
patent: 2003/0215570 (2003-11-01), Seutter et al.
patent: 2005/0066892 (2005-03-01), Dip et al.
patent: 2005/0266631 (2005-12-01), Kim et al.
patent: 2008/0026549 (2008-01-01), Kim et al.
patent: 2008/0237732 (2008-10-01), Mori et al.
patent: 2009/0011570 (2009-01-01), Mizushima et al.
patent: 2006-013428 (2006-01-01), None
Itokawa Hiroshi
Mizushima Ichiro
Mori Shinji
Murano Masahiko
Nakao Takashi
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kabushiki Kaisha Toshiba
Parker John M
Smith Matthew
LandOfFree
Method of fabricating semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of fabricating semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4298164