Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2007-07-17
2009-02-10
Nguyen, Ha Tran T (Department: 2829)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C716S030000, C716S030000, C700S129000
Reexamination Certificate
active
07488691
ABSTRACT:
A method of fabricating a semiconductor device of the present invention includes a step (S100) of judging whether an interconnect pitch of an interconnect pattern having the smallest interconnect pitch out of all interconnect patterns to be formed in the insulating film is not larger than a predetermined value or not; a step (S104) of determining the thickness of the lower resist film corresponding to the interconnect pitch, if the interconnect pitch is judged as being not larger than a predetermined pitch, in the step of judging whether the interconnect pitch is not smaller than the predetermined value; and a step (S106) of forming, on the insulating film, the lower resist film having the thickness determined in step S104by using a multi-layered resist.
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Kusumakar Karen M
McGinn IP Law Group PLLC
NEC Electronics Corporation
Nguyen Ha Tran T
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