Method of forming an insulating capping layer for a copper...

Details Method of forming an insulating capping layer for a copper... Method of forming an insulating capping layer for a copper...

2006-05-17

2009-02-17

Kebede, Brook (Department: 2894)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S687000, C257SE21575

Reexamination Certificate

active

07491638

ABSTRACT:
A new technique is disclosed in which a barrier/capping layer for a copper-based metal line is formed by using a thermal-chemical treatment followed by an in situ plasma-based deposition of silicon nitride and/or silicon carbon nitride. The thermal-chemical treatment is performed on the basis of an ammonium
itrogen mixture in the absence of any plasma ambient.

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