Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Self-aligned
Reexamination Certificate
2008-04-29
2008-04-29
Le, Thao P. (Department: 2818)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Self-aligned
Reexamination Certificate
active
10528440
ABSTRACT:
There is provided a method of fabricating semiconductor devices that allows ion implantation to be performed at high temperature with ions accelerated with high energy to help to introduce dopant in a semiconductor substrate, in particular a SiC semiconductor substrate, at a selected region to sufficient depth. To achieve this the method includes the steps of: providing the semiconductor substrate at a surface thereof with a mask layer including a polyimide resin film, or a SiO2film and a thin metal film; and introducing dopant ions.
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Fujikawa Kazuhiro
Harada Shin
Fasse W. F.
Fasse W. G.
Sumitomo Electric Industries Ltd.
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