Method of fabricating semiconductor device

Details Method of fabricating semiconductor device Method of fabricating semiconductor device

1996-12-17

1999-10-26

Dang, Trung

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Recessed oxide by localized oxidation

438439, 438447, 438425, H01L 2176

Patent

active

059727780

ABSTRACT:
A method of fabricating a semiconductor device, including the steps of (a) forming a channel at a surface of a semiconductor substrate only in the center of a region X which physically and electrically isolates adjacent regions Y in each of which a device is to be fabricated, and (b) forming a silicon oxide layer over the region X for physically and electrically isolating the adjacent regions Y from each other. The method suppresses dimensional shift and occurrence of a stress, and further makes it difficult for the reverse narrow channel effect to occur only by adding the small number of additional steps thereto.

REFERENCES:
patent: 4965221 (1990-10-01), Dennison et al.
patent: 5137843 (1992-08-01), Kim et al.
patent: 5173444 (1992-12-01), Karamura
patent: 5246537 (1993-09-01), Cooper et al.
patent: 5374584 (1994-12-01), Lee et al.

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