Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-08-14
2007-08-14
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S637000, C438S640000, C257SE21585
Reexamination Certificate
active
11094011
ABSTRACT:
A method of fabricating a semiconductor device. A semiconductor substrate with a patterned conductive layer on a top surface of the substrate is first provided. A dielectric layer is then formed to cover the substrate. Thereafter, an electron beam irradiation procedure is performed to anneal the patterned conductive layer and reduce resistance of the patterned conductive layer.
REFERENCES:
patent: 6468906 (2002-10-01), Chan et al.
patent: 2005/0245096 (2005-11-01), Gates et al.
Stanley Wolf, “Silicon Processing for the VLSI Era”, 2002 by Lattice Press, vol. 4, pp. 770-772.
Liao Yi-Chi
Lin Keng-Chu
Lu Yung-Cheng
Su Hung-Wen
Tsai Hung-Chun
Lebentritt Michael
Lee Cheung
Taiwan Semiconductor Manufacturing Co. Ltd.
Thomas Kayden Horstemeyer & Risley
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