Method of fabricating semiconductor device

Details Method of fabricating semiconductor device Method of fabricating semiconductor device

2007-06-19

2007-06-19

Everhart, Caridad M. (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S648000, C257SE21170

Reexamination Certificate

active

11024659

ABSTRACT:
A method of fabricating a semiconductor device, provide a simplification of the fabricating process by removing a step of forming an oxide film, and vapor depositing a nitride film, after forming a gate. The method of fabricating the semiconductor device includes the steps of forming a trench, a gate insulating film, and a poly gate on a substrate; forming a nitride film on the substrate; forming an LDD region by ion implantation using the gate as a mask; forming an oxide film on the substrate; forming a sidewall by etching the oxide film; forming a source/drain by ion implantation using the gate and the sidewall as masks; vapor depositing PMD over the substrate, and then planarizing the substrate; forming a contact hole by etching the PMD; and vapor depositing a barrier metal on the PMD, treating with heat, and filling up the contact hole.

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