Method of fabricating semiconductor device

Details Method of fabricating semiconductor device Method of fabricating semiconductor device

2005-12-06

2005-12-06

Thompson, Craig A. (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

Reexamination Certificate

active

06972248

ABSTRACT:
A method of fabricating a semiconductor device. A stack gate structure having a cap layer thereon and a first dielectric layer having a top surface that exposes the cap layer are formed on a substrate. A buffer layer is formed to cover the dielectric layer and the cap layers in a first region of the substrate. A portion of the cap layers in a second region of the substrate are removed so that the cap layers have a thickness smaller than or equal to the buffer layer. A second dielectric layer is formed over the substrate. A portion of the second dielectric layer and the underlying the buffer layer and the first dielectric layer are etched to form a bit line contact opening. In the meantime, a portion of the second dielectric layer and the underlying cap layer are etched to form a gate contact opening.

REFERENCES:
patent: 6661051 (2003-12-01), Durcan et al.

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