Method of fabricating semiconductor device

Details Method of fabricating semiconductor device Method of fabricating semiconductor device

2005-02-08

2005-02-08

Pham, Long (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

C257S477000

Reexamination Certificate

active

06852580

ABSTRACT:
The invention provides a bias circuit for suppressing change with temperature of an idle current of a power transistor and a semiconductor device including the bias circuit. The bias circuit includes a first bipolar transistor having an emitter, a base and a collector, and at least one Schottky diode connected to the base of the first bipolar transistor, and the at least one Schottky diode is provided for supplying a base potential for suppressing a collector current of the first bipolar transistor from changing in accordance with temperature change.

REFERENCES:
patent: 4414557 (1983-11-01), Amemiya et al.
patent: 5049834 (1991-09-01), Kasai
patent: 5051623 (1991-09-01), Yarbrough et al.
patent: 5061648 (1991-10-01), Aoki et al.
patent: 5153456 (1992-10-01), Keown
patent: 5173621 (1992-12-01), Fraser et al.
patent: 5408136 (1995-04-01), Ovens et al.
patent: 5798668 (1998-08-01), George
patent: 5837589 (1998-11-01), McNamara et al.
patent: 5917341 (1999-06-01), Suder et al.
patent: 5986324 (1999-11-01), Adlerstein et al.
patent: 6127716 (2000-10-01), Morizuka et al.
patent: 6127876 (2000-10-01), Soltero
patent: 356147467 (1981-11-01), None
patent: 11-68469 (1990-08-01), None
patent: 08-288527 (1996-11-01), None
patent: 09-074140 (1997-03-01), None
Jane Radatz, “The IEEE Standard Dictionary of Electrical and Electronics Terms”, Apr. 1997, 6thedition.
Adel S. Sedra et al., “Microelectronic Circuits”, 1982.
Peter Van Zant, “Microchip Fabrication: A Practical Guide to Semiconductor Processing”, fourth edition.
Donald G. Fink, “Electronics Engineers' Handbook”, Second edition.
Notice of Reasons of Rejection dated Feb. 3, 2004.
Japanese Patent Abstract Publication No. 10-004344A.
Japanese Patent Abstract Publication No. 09-181532A.
Japanese Patent Abstract Publication No. 05-129847A.

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