Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Diffusing a dopant
Reexamination Certificate
2006-12-05
2006-12-05
Nguyen, Thanh (Department: 2813)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Diffusing a dopant
C438S224000, C438S228000
Reexamination Certificate
active
07144796
ABSTRACT:
A semiconductor element such as a DMOS-transistor is fabricated in a semiconductor substrate. Wells of opposite conductivity are formed by implanting and then thermally diffusing respective well dopants into preferably spaced-apart areas in the substrate. At least one trench and active regions are formed in the substrate. The trench may be a shallow drift zone trench of a DMOS-transistor, and/or a deep isolation trench. The thermal diffusion of the well dopants includes at least one first diffusion step during a first high temperature drive before forming the trench, and at least one second diffusion step during a second high temperature drive after forming the trench. Dividing the thermal diffusion steps before and after the trench formation achieves an advantageous balance between reducing or avoiding lateral overlapping diffusion of neighboring wells and reducing or avoiding thermally induced defects along the trench boundaries.
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Dietz Franz
Dudek Volker
Graf Michael
Atmel Germany GmbH
Fasse W. F.
Fasse W. G.
Nguyen Thanh
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