Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching
Patent
1998-06-19
2000-06-06
Whitehead, Jr., Carl
Semiconductor device manufacturing: process
Chemical etching
Liquid phase etching
438 31, 438 32, 438707, 438708, 438712, 438714, H01L 21461
Patent
active
060718293
ABSTRACT:
A method of fabricating a semiconductor component, the method including at least one step of etching an upper layer formed on a substrate. In the method, prior to forming the upper layer, at least one set made up of marker layers separated by intermediate layers of predetermined thicknesses is caused to be grown, where the marker layers and adjacent intermediate layers have different refractive indices, and then during etching of the upper layer refractive index discontinuities are detected optically and etching is stopped when the sequence of the optically detected discontinuities corresponds to a reference sequence representative of the thicknesses of the intermediate layers.
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Le Gouezigou Lionel
Starck Christophe
Alcatel
Duong Khanh
Jr. Carl Whitehead
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