Method of fabricating semiconductor chips with silicide and impl

Details Method of fabricating semiconductor chips with silicide and impl Method of fabricating semiconductor chips with silicide and impl

1997-09-25

2000-10-24

Thomas, Tom

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

438597, 438648, 438649, 438651, 438655, 438656, 438663, 438664, 438682, 438683, 438685, 257368, 257382, 257383, 257384, 257389, 257390, H01L 213205, H01L 21324, H01L 2144, H01L 214763

Patent

active

061366773

ABSTRACT:
A method of fabricating a semiconductor device includes the steps of providing a semiconductor chip (10) with a memory area (22) and a logic area (26). The memory area (22) and the logic area (26) each have gate structures (50) formed therein. The step of sequentially forming silicided junctions (44) in the logic area (26) and implanted junctions in the memory area (26) is also included.

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