Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1997-08-29
1999-11-23
Niebling, John F.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438151, 438158, 438160, 438166, H01L 2100, H01L 2184
Patent
active
059899441
ABSTRACT:
A method of manufacturing an inverse-staggered self-aligned thin film transistor on a substrate having a front surface and a back surface is provided. The method includes the steps of (a) forming a gate electrode over the front surface of the substrate,(b) forming a gate insulating layer over the gate electrode,(c) forming a semiconductor active layer over the gate insulating layer adjacent the gate electrode. The method further includes the steps of (d) forming an impurity-doped semiconductor layer over the active layer and (e) radiating a laser beam from the back side of the substrate using the gate electrode as a mask to substantially crystallize portions of the active layer and the impurity-doped semiconductor layer to define source and drain regions in the active layer.
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Hack Jonathan
LG Electronics Inc.
Niebling John F.
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