Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-06-14
2005-06-14
Nguyen, Thanh (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S638000, C438S641000, C438S648000, C438S656000, C438S674000, C438S685000
Reexamination Certificate
active
06905964
ABSTRACT:
An improved and new process for fabricating self-aligned metal barriers by atomic layer deposition, ALD, capable of producing extremely thin, uniform, and conformal metal barrier films, selectively depositing on copper, not on silicon dioxide interlevel dielectric, in multi-layer dual damascene trench/via processing. Silicon nitride is presently used as a insulating copper barrier. However, silicon nitride has a relatively high dielectric constraint, which deteriorates ICs with increased RC delay. Copper metal barriers of niobium and tantalum have been deposited by atomic layer deposition on copper. With high deposition selectivity, the barrier metal is only deposited over copper, not on silicon dioxide, which eliminates the need of an insulating barrier of silicon nitride.
REFERENCES:
patent: 6258713 (2001-07-01), Yu et al.
patent: 6274932 (2001-08-01), Mikagi
patent: 6281127 (2001-08-01), Shue
patent: 6284646 (2001-09-01), Leem
patent: 6287965 (2001-09-01), Kang et al.
patent: 6291334 (2001-09-01), Somekh
patent: 6416822 (2002-07-01), Chiang et al.
patent: 6605874 (2003-08-01), Leu et al.
patent: 2004/0087136 (2004-05-01), Wu et al.
Lim Boon Kiat
See Alex
Ackerman Stephen B.
Chartered Semiconductor Manufacturing Ltd.
Nguyen Thanh
Pike Rosemary L. S.
Saile George O.
LandOfFree
Method of fabricating self-aligned metal barriers by atomic... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of fabricating self-aligned metal barriers by atomic..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating self-aligned metal barriers by atomic... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3463397