Method of fabricating self-aligned contact

Details Method of fabricating self-aligned contact Method of fabricating self-aligned contact

1998-02-23

2000-08-22

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

438597, 438647, 438649, H01L 213205

Patent

active

061071757

ABSTRACT:
A method of a method of fabricating a contact. A substrate having a plurality of gates and a plurality of lightly doped source/drain regions is provided. A dielectric layer is formed and patterned to form a self-align contact window to expose a first lightly doped source/drain region of said lightly doped source/drain regions, and to form a first spacer on a side wall of a first gate of said gates simultaneously. An ion implantation is performed by using the first spacer as a mask, so that a first heavily doped source/drain region is formed in the first lightly doped source/drain region. A doped poly-silicon layer is formed over the substrate, and a metal silicide layer is formed on the doped poly-silicon layer. The doped poly-silicon and the metal silicide layer are patterned to form a self-align contact.

REFERENCES:
patent: 5480837 (1996-01-01), Liaw et al.
patent: 5843815 (1998-12-01), Liaw
Wolf et al. ( Silicon Processing for the VLSI Era, vol. 1, p. 181, 1986.

Affiliated with

Also associated with

Rating

Method of fabricating self-aligned contact does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating self-aligned contact, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating self-aligned contact will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-580507