Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Self-aligned
Reexamination Certificate
2008-07-25
2009-11-10
Nguyen, Dao H (Department: 2818)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Self-aligned
C438S320000, C438S341000, C438S350000, C257S049000, C257S197000, C257S649000, C257SE21696, C257SE27055
Reexamination Certificate
active
07615457
ABSTRACT:
A method is provided for making a bipolar transistor which includes a tapered, i.e. frustum-shaped, collector pedestal having an upper substantially planar surface, a lower surface, and a slanted sidewall extending between the upper surface and the lower surface, the upper surface having substantially less area than the lower surface. The collector pedestal can be formed on a surface of a collector active region exposed within an opening extending through first and second overlying dielectric regions, where the opening defines vertically aligned edges of the first and second dielectric regions.
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Akatsu Hiroyuki
Divakaruni Rama
Freeman Gregory G.
Greenberg David R.
Khater Marwan H.
International Business Machines - Corporation
Neff Daryl K.
Nguyen Dao H
Schnurmann B. Daniel
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