Method of fabricating self-align contact window with silicon nit

Details Method of fabricating self-align contact window with silicon nit Method of fabricating self-align contact window with silicon nit

1997-10-20

1999-08-10

Meier, Stephen D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257410, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

059362790

ABSTRACT:
A gate oxide layer, a polysilicon layer are patterned on a substrate. Then, a thermal oxidation is carried out to form the first silicon dioxide layer on the surface of the polysilicon layer. Then, a first silicon nitride layer is patterned on the first silicon dioxide layer, over the top of the polysilicon layer. Then, a second silicon nitride layer is formed on the first silicon dioxide layer and the first silicon nitride layer. Next, a second silicon dioxide layer is formed on the second silicon nitride layer. Then, an etching technique is used to form the side-wall spacers. The side-wall spacers composed of silicon nitride layer and silicon dioxide layer. A dielectric layer is formed on the cap layer, side-wall spacers and silicon dioxide layer. An etch with high selectivity is used to etch the dielectric layer to create a contact hole.

REFERENCES:
patent: 5324974 (1994-06-01), Liao

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