Method of fabricating self-align contact window with silicon nit

Details Method of fabricating self-align contact window with silicon nit Method of fabricating self-align contact window with silicon nit

1996-05-09

1998-09-29

Chaudhari, Chandra

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

438763, 438970, H01L 213205

Patent

active

058145532

ABSTRACT:
The process of the present invention has numerous advantages over the prior art. The silicon nitride side-wall spacers permit a small contact hole thus miniaturizing the cell beyond lithographic limits. The side-wall spacers composed of silicon nitride and silicon dioxide avoid to expose the polysilicon when the contact window is formed by etching step. Moreover, the highly selective etching process improve the accuracy of the contact window.

REFERENCES:
patent: 5053351 (1991-10-01), Fazan et al.
patent: 5364804 (1994-11-01), Ho et al.
patent: 5573965 (1996-11-01), Chen et al.

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