Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal
Reexamination Certificate
2011-04-12
2011-04-12
Coleman, W. David (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
C359S233000
Reexamination Certificate
active
07923789
ABSTRACT:
The contrast offered by a spatial light modulator device may be enhanced by positioning nonreflective elements such as supporting posts and moveable hinges, behind the reflecting surface of the pixel. In accordance with one embodiment, the reflecting surface is suspended over and underlying hinge-containing layer by integral ribs of the reflecting material defined by gaps in a sacrificial layer. In accordance with an alternative embodiment, the reflecting surface is separated from the underlying hinge by a gap formed in an intervening layer, such as oxide. In either embodiment, walls separating adjacent pixel regions may be recessed beneath the reflecting surface to further reduce unwanted scattering of incident light and thereby enhance contrast.
REFERENCES:
patent: 5652671 (1997-07-01), Knipe et al.
Henley et al., “A New SOI Manufacturing Technology Using Atomic layer Cleaving.” Silicon Genesis Corporation Campbell CA. pp. 1-5, Fabtech.org, Jun. 1, 2000.
Chen Dongmin
Huang Kegang
Yang Xiao
Coleman W. David
Kilpatrick Townsend & Stockton LLP
Miradia Inc.
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