Method of fabricating quantum bridges by selective etching of su

Details Method of fabricating quantum bridges by selective etching of su Method of fabricating quantum bridges by selective etching of su

1995-06-05

1997-05-20

McPherson, John A.

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Fluid growth from gaseous state combined with subsequent...

438 49, 438 94, 438752, 438753, 438750, H01L 2120

Patent

active

056309058

ABSTRACT:
A quantum bridge structure including wires of a semiconductor material such as silicon which are formed by selectively etching a superlattice of alternating layers of at least two semiconductor materials. The quantum bridge is useful as a photo emission device, a photo detector device, and a chemical sensor. The wires exhibit improved electrical conduction properties due to decreased Coulomb scattering.

REFERENCES:
patent: 4983540 (1991-01-01), Yamaguchi et al.
patent: 5357119 (1994-10-01), Wang et al.
patent: 5383212 (1995-01-01), Knox et al.
patent: 5427977 (1995-06-01), Yamada et al.

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