Method of fabricating probe for SPM having FET channel...

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S666000

Reexamination Certificate

active

07008811

ABSTRACT:
Provided is a method of fabricating a probe for a scanning probe microscope (SPM) having a field effect transistor (FET) channel structure utilizing a self-aligned fabrication. The provided method includes a first step of forming a first-shaped mask layer on a substrate and forming a source region and a drain region in regions of the substrate except for the mask layer; a second step of patterning a first-shaped photoresist in a perpendicular direction to the mask layer and performing an etching process to form a second-shaped mask layer; and a third step of etching the regions of the substrate except for the mask layer to form a probe. The provided method aligns the center of a tip with the center of a channel existing between the source region and the drain region to realize a tip having a size of tens of nanometers. Thus, a nano-device can be easily manufactured using the probe having the tip.

REFERENCES:
patent: 5618760 (1997-04-01), Soh et al.
patent: 6022797 (2000-02-01), Ogasawara et al.
patent: 6521921 (2003-02-01), Lim et al.
patent: 8-86788 (1996-04-01), None
patent: 2001-45981 (2001-06-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of fabricating probe for SPM having FET channel... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating probe for SPM having FET channel..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating probe for SPM having FET channel... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3564223

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.