Method of fabricating polysilicon thin film transistor with...

Details Method of fabricating polysilicon thin film transistor with... Method of fabricating polysilicon thin film transistor with...

2002-12-06

2008-08-19

Pham, Thanh V (Department: 2823)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C438S149000, C438S486000, C438S488000, C438S775000, C438S776000, C438S508000, C438S508000, C257SE21411, C257SE21416, C257SE21132, C260SDIG035

Reexamination Certificate

active

07413966

ABSTRACT:
A method of forming a polycrystalline silicon active layer for use in a thin film transistor is provided. The method includes forming a buffer layer over a substrate, forming an amorphous silicon layer over the buffer layer, applying a catalytic metal to a surface of the amorphous silicon layer, crystallizing the amorphous silicon layer having the catalytic metal thereon into a polycrystalline silicon layer, annealing the polycrystalline silicon layer in an N2gas atmosphere to stabilize the polycrystalline silicon layer, etching a surface of the polycrystalline silicon layer using an etchant, and patterning the polycrystalline silicon layer to form an island-shaped active layer.

REFERENCES:
patent: 5534716 (1996-07-01), Takemura
patent: 5970366 (1999-10-01), Okonogi
patent: 6020260 (2000-02-01), Gardner
patent: 6084247 (2000-07-01), Yamazaki et al.
patent: 6096572 (2000-08-01), Nakamura
Wolf, Silicon Processing for the VLSI Era, vol. 1, Lattice Press, 1986, p. 109.
Ghandhi, VLSI Fabrication Principles, John Wiley & Sons, Inc., 1994, pp. 639-643.

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