Method of fabricating polysilicon thin film transistor

Details Method of fabricating polysilicon thin film transistor Method of fabricating polysilicon thin film transistor

2005-01-11

2005-01-11

Chaudhari, Chandra (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S486000

Reexamination Certificate

active

06841433

ABSTRACT:
A method of forming a polycrystalline silicon active layer for use in a thin film transistor is provide. The method includes forming a buffer layer over a substrate, forming an amorphous silicon layer over the buffer layer, applying a catalytic metal to a surface of the amorphous silicon layer, crystallizing the amorphous silicon layer having the catalytic metal thereon into a polycrystalline silicon layer, forming an island pattern on the polycrystalline silicon layer, thereby defining an active region underneath in the polycrystalline silicon layer, applying n-type ions to the polycrystalline silicon layer and then heat-treating the polycrystalline silicon layer to remove the catalytic metal from the active region underneath the island pattern, and patterning the polycrystalline silicon layer using the island pattern as a mask to form an active layer.

REFERENCES:
patent: 5534716 (1996-07-01), Takemura
patent: 6436745 (2002-08-01), Gotou et al.
patent: 6468841 (2002-10-01), Muramatsu et al.

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