Method of fabricating polysilicon film

Details Method of fabricating polysilicon film Method of fabricating polysilicon film

2006-10-03

2006-10-03

Booth, Richard A. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S479000

Reexamination Certificate

active

07115455

ABSTRACT:
A method of fabricating polycrystalline silicon layer of TFT is provided. The method includes sequentially forming an insulating layer, a first amorphous silicon layer, and a cap layer on a substrate. A laser annealing is performed to transform the first amorphous silicon layer to a first polycrystalline silicon layer, wherein at least one hole is formed in the amorphous silicon layer during the laser annealing process. Thereafter, the cap layer is removed. A portion of the insulating layer exposed within the hole is removed to form a second opening. A second amorphous silicon layer is formed over the first polycrystalline silicon layer filling the second opening. Finally a second annealing is performed to transform the second amorphous silicon layer to a second polycrystalline silicon layer.

REFERENCES:
patent: 6815269 (2004-11-01), Okumura
patent: 2005/0019994 (2005-01-01), Chang

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