Method of fabricating polysilicon film

Details Method of fabricating polysilicon film Method of fabricating polysilicon film

2005-07-12

2005-07-12

Thompson, Craig A. (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

Reexamination Certificate

active

06916690

ABSTRACT:
A method of fabricating polysilicon film is described. An amorphous silicon layer is formed on the substrate, an optical layer is formed on the amorphous silicon layer, wherein the optical has a first region having a first thickness and a second region having a second thickness, and the reflectivity of the first region for an excimer laser is higher than that of the second region. A laser annealing process is then preformed to transform the amorphous silicon layer into a polysilicon film.

REFERENCES:
patent: 2002/0034863 (2002-03-01), Yamazaki et al.
patent: 452892 (2001-09-01), None

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