Method of fabricating polycrystalline silicon thin-film transist

Details Method of fabricating polycrystalline silicon thin-film transist Method of fabricating polycrystalline silicon thin-film transist

1996-08-14

1997-08-19

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438157, 438384, H01L 21265, H01L 2170, H01L 2184

Patent

active

056588089

ABSTRACT:
A method of fabricating a polycrystalline silicon thin-film transistor having two symmetrical lateral resistors is disclosed. Two sub-gates are formed along with a gate in the gate metal or polysilicon layer of the thin-film transistor. The two sub-gates that are located symmetrically on the two sides of the gate have equal distances to the gate. One sub-gate is near the drain of the thin film transistor and the other near the source. Two sections in the polycrystalline silicon layer of the thin film transistor are blocked by the two sub-gates and no impurity material is doped. The two undoped sections form the symmetrical lateral resistors of this invention. The lateral resistor near the drain decreases the electric field in the nearby depletion area when the thin-film transistor is switched off. The current leakage is reduced.

REFERENCES:
patent: 5037766 (1991-08-01), Wang
patent: 5372958 (1994-12-01), Miyasaka et al.
patent: 5462887 (1995-10-01), Gluck
patent: 5504019 (1996-04-01), Miyasaka et al.
patent: 5529937 (1996-06-01), Zhang et al.

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