Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-06-19
2010-11-02
Nhu, David (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S288000, C257S347000, C257SE21170, C257SE21320, C257SE21388, C257SE21324, C257SE21334, C257SE21562, C257SE21571, C257SE21632
Reexamination Certificate
active
07825476
ABSTRACT:
A method of fabricating a polycrystalline silicon (poly-Si) layer includes providing a substrate, forming an amorphous silicon (a-Si) layer on the substrate, forming a thermal oxide layer to a thickness of about 10 to 50 Å on the a-Si layer, forming a metal catalyst layer on the thermal oxide layer, and annealing the substrate to crystallize the a-Si layer into the poly-Si layer using a metal catalyst of the metal catalyst layer. Thus, the a-Si layer can be crystallized into a poly-Si layer by a super grain silicon (SGS) crystallization method. Also, the thermal oxide layer may be formed during the dehydrogenation of the a-Si layer so that an additional process of forming a capping layer required for the SGS crystallization method can be omitted, thereby simplifying the fabrication process.
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Lee Ki-Yong
Lee Kil-Won
Park Byoung-Keon
Seo Jin-Wook
Yang Tae-Hoon
Nhu David
Samsung Mobile Display Co., Ltd.
Stein McEwen, LLP
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