Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2006-08-29
2006-08-29
Chen, Jack (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S163000, C438S166000
Reexamination Certificate
active
07098089
ABSTRACT:
A method of fabricating a thin film transistor using a metal induced lateral crystallization is provided. The thin film transistor fabrication method includes the steps of: forming an amorphous silicon film on an insulation substrate, and then patterning the amorphous silicon film, to thereby form a semiconductor layer; sequentially forming a gate insulation film and a gate electrode on the substrate, and forming a photosensitive film pattern for forming the gate electrode, and then over-etching the gate electrode by a wet etching process; dry-etching the gate insulation film and then patterning the dry-etched gate insulation film again by the wet etching process; removing the photosensitive film pattern; and ion-injecting high-concentration impurities into the semiconductor layer to thus form a source/drain region and a lightly doped drain (LDD) structure simultaneously. When a thin film transistor is fabricated according to the above-described steps, an off-set and LDD structure essential for the thin film transistor can be effectively formed without requiring for an additional mask process.
REFERENCES:
patent: 6586287 (2003-07-01), Joo et al.
LandOfFree
Method of fabricating poly-silicon thin film transistor... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of fabricating poly-silicon thin film transistor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating poly-silicon thin film transistor... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3699414