Method of fabricating phase change RAM including a fullerene...

Details Method of fabricating phase change RAM including a fullerene... Method of fabricating phase change RAM including a fullerene...

2006-11-28

2009-08-11

Lee, Hsien-ming (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Thermally responsive

C438S102000, C438S642000, C438S645000, C438S665000, C977S734000, C257SE51039, C257SE45002

Reexamination Certificate

active

07572662

ABSTRACT:
A method of fabricating a phase change RAM (PRAM) having a fullerene layer is provided. The method of fabricating the PRAM may include forming a bottom electrode, forming an interlayer dielectric film covering the bottom electrode, and forming a bottom electrode contact hole exposing a portion of the bottom electrode in the interlayer dielectric film, forming a bottom electrode contact plug by filling the bottom electrode contact hole with a plug material, forming a fullerene layer on a region including at least an upper surface of the bottom electrode contact plug and sequentially stacking a phase change layer and an upper electrode on the fullerene layer. The method may further include forming a switching device on a substrate and a bottom electrode connected to the switching device, forming an interlayer dielectric film covering the bottom electrode and forming a bottom electrode contact hole exposing a portion of the bottom electrode in the interlayer dielectric film.

REFERENCES:
patent: 2006/0157771 (2006-07-01), Choi et al.
patent: 2007/0025138 (2007-02-01), Furukawa et al.
patent: 2007/0051935 (2007-03-01), Lee et al.
Fullerene, Dictionary reference, Academic Press Dictionary of Science and Technology, 1992, Oxford: Elsevier Science and Technology.

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