Method of fabricating passivation

Details Method of fabricating passivation Method of fabricating passivation

2006-12-28

2009-12-01

Nguyen, Dao H (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S612000, C438S614000, C438S626000, C438S631000, C438S633000, C257SE21560, C257SE21590, C257SE21627, C257S734000, C257S748000, C257S752000, C257S780000

Reexamination Certificate

active

07625816

ABSTRACT:
Embodiments relate to a passivation fabricating method. In the passivation fabricating method according to embodiments, a first oxide film may be formed by repeating deposition and etching of an oxide film on a silicon substrate in which an upper metal pad may be formed and a second oxide film may be formed by performing only deposition on the first oxide film. A thickness of the first oxide film may be set to be above 5 kÅ. A first passivation layer may be formed by planarizing the first and second oxide films. In the planarizing process, a thickness of the first passivation layer may be 4 kÅ. A second passivation layer of a nitride film may be formed on the first passivation layer and the first and second passivations may be selectively etched so as to expose the upper metal pad.

REFERENCES:
patent: 6667230 (2003-12-01), Chen et al.
patent: 7282433 (2007-10-01), Tang et al.

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