Method of fabricating on-chip spacers for a TFT panel

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer

Reexamination Certificate

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C438S032000, C438S039000, C438S098000, C438S459000

Reexamination Certificate

active

06989299

ABSTRACT:
A method for fabricating on-chip spacers for a TFT panel exposes a photoresist layer on top of the TFT panel using two exposure processes, one through the bottom of the TFT and the other through a mask over the TFT panel. The exposure process through the bottom exposes all photoresist covering windows on the TFT panel and leaves all photoresist corresponding to an opaque grid corresponding a TFT driving circuit. A second exposure process through a mask above the photoresist leaves part of the photoresist in the opaque grid unexposed. The exposed photoresist is removed leaving on-chip spacers only on the opaque grid. Therefore, the on-chip spacers can not affect the display quality and can be easily formed on a high dpi TFT panel.

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