Metal working – Method of mechanical manufacture – Electrical device making
Reexamination Certificate
2007-06-26
2007-06-26
Tugbang, A. Dexter (Department: 3729)
Metal working
Method of mechanical manufacture
Electrical device making
C029S603070, C360S324100, C360S324110, C360S324120, C428S811200, C428S812000
Reexamination Certificate
active
10308597
ABSTRACT:
A method for forming a bottom spin valve sensor element with a novel seed layer and synthetic antiferromagnetic pinned layer. The novel seed layer comprises an approximately 30 angstrom thick layer of NiCr whose atomic percent of Cr is 31%. On this seed layer there can be formed either a single bottom spin valve read sensor or a symmetric dual spin valve read sensor having synthetic antiferromagnetic pinned layers. An extremely thin (approximately 80 angstroms) MnPt pinning layer can be formed directly on the seed layer and extremely thin pinned and free layers can then subsequently be formed so that the sensors can be used to read recorded media with densities exceeding 60 Gb/in2. Moreover, the high pinning field and optimum magnetostriction produces an extremely robust sensor.
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Horng Cheng T.
Tong Ru-Ying
Trong Chyu-Jiuh
Wang Hui-Chuan
Aukerman Stephen B.
Headway Technologies Inc.
Saile Aukerman LLC
Tugbang A. Dexter
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