Method of fabricating nonvolatile memory device

Details Method of fabricating nonvolatile memory device Method of fabricating nonvolatile memory device

2009-12-21

2011-10-04

Wilczewski, Mary (Department: 2822)

Semiconductor device manufacturing: process

Having selenium or tellurium elemental semiconductor component

C257S005000, C257SE21068, C257SE21233, C257SE27004, C257SE45002

Reexamination Certificate

active

08030129

ABSTRACT:
A method of manufacturing a nonvolatile memory device including forming on a lower insulating layer a first sacrificial pattern having first openings extending in a first direction, forming a second sacrificial pattern having second openings extending in a second direction on the lower insulating layer and the first sacrificial pattern wherein the second openings intersect the first openings, etching the lower insulating layer using the first and second sacrificial patterns to form a lower insulating pattern having contact holes defined by a region where the first and second openings intersect each other, forming a bottom electrode in the contact holes, and forming a variable resistance pattern on the lower insulating pattern so that a portion of the variable resistance pattern connects to a top surface of the bottom electrode.

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