Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor
Reexamination Certificate
2010-01-22
2011-11-01
Garber, Charles (Department: 2812)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Compound semiconductor
C438S022000, C438S046000, C257SE21090
Reexamination Certificate
active
08048702
ABSTRACT:
In the method of fabricating a nitride-based semiconductor optical device by metal-organic chemical vapor deposition, a barrier layer is grown at a first temperature while supplying a gallium source to a reactor. The barrier layer comprises a first gallium nitride-based semiconductor. After the growth of the barrier layer, a nitrogen material and an indium material are supplied to the reactor without supply of the gallium source to perform a preflow of indium. Immediately after the preflow, a well layer is grown on the barrier layer at a second temperature while supplying an indium source and the gallium source to the reactor. The well layer comprises InGaN, and the second temperature is lower than the first temperature. The gallium source and the indium source are supplied to the reactor during plural first periods of the step of growing the well layer to grow plural InGaN layers, respectively. The indium material is supplied to the reactor without supply of the gallium source during the second period of the step of growing the well layer. The second period is between the first periods. The well layer comprises the plural InGaN layers.
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Akita Katsushi
Enya Yohei
Kyono Takashi
Ueno Masaki
Yoshizumi Yusuke
Garber Charles
Mustapha Abdulfattah
Sartori Michael A.
Sumitomo Electric Industries Ltd.
Venable LLP
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