Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – On insulating substrate or layer
Reexamination Certificate
2006-06-21
2009-08-04
Picardat, Kevin M (Department: 2822)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
On insulating substrate or layer
C438S039000, C438S041000, C438S042000, C438S044000, C438S046000, C438S047000
Reexamination Certificate
active
07569461
ABSTRACT:
In a method for fabricating a nitride-based compound layer, first, a GaN substrate is prepared. A mask layer with a predetermined pattern is formed on the GaN substrate to expose a partial area of the GaN substrate. Then a buffer layer is formed on the partially exposed GaN substrate. The buffer layer is made of a material having a 10% or less lattice mismatch with GaN. Thereafter, the nitride-based compound is grown laterally from a top surface of the buffer layer toward a top surface of the mask layer and the nitride-based compound layer is vertically grown to a predetermined thickness. Also, the mask layer and the buffer layer are removed via wet-etching to separate the nitride-based compound layer from the GaN substrate.
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Jang Sung Hwan
Kim Cheol Kyu
Koike Masayoshi
Lee Soo Min
Yoo Jaeun
Au Bac H
McDermott Will & Emery LLP
Picardat Kevin M
Samsung Electro-Mechanics Co. Ltd.
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