Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Fluid growth from gaseous state combined with preceding...
Reexamination Certificate
2009-11-30
2011-11-01
Ho, Tu-Tu (Department: 2818)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Fluid growth from gaseous state combined with preceding...
C438S099000, C438S669000, C257S009000, C257S004000, C257SE29168, C257SE21101, C977S890000, C977S901000, C977S742000
Reexamination Certificate
active
08048785
ABSTRACT:
Nanosized filamentary carbon structures (CNTs) nucleating over a catalyzed surface may be grown in an up-right direction reaching a second surface, spaced from the first surface, without the need of applying any external voltage source bias. The growth process may be inherently self-stopping, upon reaching a significant population of grown CNTs on the second surface. A gap between the two surfaces may be defined for CNT devices being simultaneously fabricated by common integrated circuit integration techniques. The process includes finding that for separation gaps of up to a hundred or more nanometers, a difference between the respective work functions of the materials delimiting the gap space, for example, different metallic materials or a doped semiconductor of different dopant concentration or type, may produce an electric field intensity orienting the growth of nucleated CNTs from the surface of one of the materials toward the surface of the other material.
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El-Hami et al., “Alignment of Different Lengths of Carbon Nanotubes Using Low Applied Electric Field”, IEICE Transactions on Electronics, Electronics Society, Tokyo, Japan, vol. E87-C, No. 12, Dec. 2004, pp. 2116-2118.
Choi et al., “Ultrahigh-density nanotransistors by using selectively grown vertical carbon nonotubes”, Applied Physics Letters, AIP, American Institute of Physics, Melville, NY, Nov. 2001, pp. 3696-3698.
Bevilacqua Maria Fortuna
Mascolo Danilo
Allen Dyer Doppelt Milbrath & Gilchrist, P.A.
Ho Tu-Tu
Jorgenson Lisa K.
STMicroelectronics S.R.L.
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