Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-10-30
2010-12-07
Richards, N Drew (Department: 2895)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S104000, C257S024000, C257S401000, C977S762000
Reexamination Certificate
active
07846786
ABSTRACT:
Provided is a method of fabricating a nano-wire array, including the steps of: depositing a nano-wire solution, which contains nano-wires, on a substrate; forming a first etch region in a stripe shape on the substrate and then patterning the nano-wires; forming drain and source electrode lines parallel to each other with the patterned nano-wires interposed therebetween; forming a plurality of drain electrodes which have one end connected to the drain electrode line and contact at least one of the nano-wires, and forming a plurality of source electrodes, which have one end connected to the source electrode line and contact the nano-wires that contact the drain electrodes; forming a second etch region between pairs of the drain and source electrodes so as to prevent electrical contacts between the pairs of the drain and source electrodes; forming an insulating layer on the substrate; and forming a gate electrode between the drain and source electrodes contacting the nano-wires on the insulating layer. Accordingly, even in an unparallel structure of nano-wires to electrode lines, a large scale nano-wire array is practicable and applicable to an integrated circuit or display unit with nano-wire alignment difficulty, as well as to device applications using flexible substrates.
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Huh Jung Hwan
Kim Eun Kyoung
Kim Gyu Tae
Kim Jong Dae
Lee Hong Yeol
Electronics and Telecommunications Research Institute
Jung Michael
Korea University Industrial & Academic Collaboration Founda
Rabin & Berdo P.C.
Richards N Drew
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