Method of fabricating nano-hetero structure

Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S014000, C977S762000

Reexamination Certificate

active

08030185

ABSTRACT:
A nano-hetero structure is provided. The nano-hetero structure includes at least one nano-semiconductor base and a plurality of metal nanoparticles attached on the surface of nano-semiconductor base.

REFERENCES:
patent: 4602988 (1986-07-01), Kolts
patent: 4889604 (1989-12-01), Khan et al.
patent: 6300274 (2001-10-01), Park et al.
patent: 6361660 (2002-03-01), Goldstein
patent: 6447650 (2002-09-01), Park et al.
patent: 6517806 (2003-02-01), Park et al.
patent: 6878666 (2005-04-01), Domen et al.
patent: 7015171 (2006-03-01), Domen et al.
patent: 7169733 (2007-01-01), Wang et al.
patent: 7220391 (2007-05-01), Huang et al.
patent: 2002/0045714 (2002-04-01), Tomalia et al.
patent: 2009/0029258 (2009-01-01), Seo et al.
patent: I229011 (2005-03-01), None
patent: I264326 (2006-10-01), None
patent: I296541 (2008-05-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of fabricating nano-hetero structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating nano-hetero structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating nano-hetero structure will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4274175

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.