Method of fabricating NAND-type flash EEPROMS without field...

Details Method of fabricating NAND-type flash EEPROMS without field... Method of fabricating NAND-type flash EEPROMS without field...

2008-05-30

2010-12-07

Booth, Richard A. (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE27078

Reexamination Certificate

active

07847336

ABSTRACT:
Methods are described for fabricating NAND-type EEPROMs without field oxide isolation. P+ implantations are employed to isolate adjacent memory cells.

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