Method of fabricating multiple nanowires of uniform length...

Details Method of fabricating multiple nanowires of uniform length... Method of fabricating multiple nanowires of uniform length...

2006-03-28

2006-03-28

Olsen, Allan (Department: 1763)

Etching a substrate: processes

Etching of semiconductor material to produce an article...

C216S087000, C216S095000, C216S099000, C216S100000, C117S001000, C117S002000, C117S075000, C117S083000, C117S087000, C977S726000

Reexamination Certificate

active

07018549

ABSTRACT:
A method is described for fabricating multiple nanowires of uniform length from a single precursor nucleation particle. The method includes growing a first nanowire segment from a nanoparticle and growing a second nanowire segment between the first nanowire segment and the nanoparticle. The first nanowire segment and the second nanowire segment have a different solubility.

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Cui, Y., et al., “Diameter-controlled synthesis of single-crystal silicon nanowires,” Applied Physics Letters, Apr. 2001, vol. 78, No. 15, pp. 2214-2216.

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