Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2008-12-19
2010-11-30
Garber, Charles D (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S198000, C438S269000, C438S479000
Reexamination Certificate
active
07842559
ABSTRACT:
A method of fabricating a multi-gate device is disclosed. In one aspect, the method includes providing a substrate having a first semiconductor layer with a first carrier mobility enhancing parameter, an insulating layer, a second semiconductor layer with a second carrier mobility enhancing parameter different from the first carrier mobility enhancing parameter. A first and second dielectric layer are then provided on the substrate. A first trench is formed in a first active region through the dielectric layers, the second semiconductor layer and the buried insulating layer. A first fin is formed in the first trench, protruding above the first dielectric layer and having the first carrier mobility enhancing parameter. A second trench is formed in a second active region through the dielectric layers. A second fin is formed in the second trench, protruding above the first dielectric layer and having the second mobility enhancing parameter.
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Collaert Nadine
Jakschik Stefan
Garber Charles D
IMEC
Junge Bryan R
Knobbe Martens Olson & Bear LLP
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