Method of fabricating MOS transistor by millisecond anneal

Details Method of fabricating MOS transistor by millisecond anneal Method of fabricating MOS transistor by millisecond anneal

2007-01-09

2007-01-09

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE21120, C257S021000

Reexamination Certificate

active

11174750

ABSTRACT:
A method of fabricating a MOS transistor by millisecond annealing. A semiconductor substrate with a gate stack comprising a gate electrode overlying a gate dielectric layer on a top surface of a semiconductor substrate is provided. At least one implanting process is performed to form two doped regions on opposite sides of the gate electrode. Millisecond annealing activates dopants in the doped regions. The millisecond anneal includes rapid heating and rapid cooling within 1 to 50 milliseconds.

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