Method of fabricating MOS field effect transistors

Details Method of fabricating MOS field effect transistors Method of fabricating MOS field effect transistors

1980-11-24

1982-04-13

Ozaki, G.

Metal working

Method of mechanical manufacture

Assembling or joining

29591, 148187, 357 23, 357 65, H01L 2128

Patent

active

043240380

ABSTRACT:
A method for making a MOSFET device (20) in a semiconductor body (10) includes the step of forming source and drain contact electrodes (12.1, 12.2) prior to growth of the gate oxide (10.3) and after formation of a high conductivity surface region (10.5). The exposed mutually opposing sidewall edges of each of the contact electrodes (12.1, 12.2) are coated with a sidewall silicon dioxide layer (15.1, 15.2), and the then exposed surface of the semiconductor body (10) between these sidewalls is etched to depth beneath the high conductivity surface region (10.5) in order to separate it into the source and drain regions (10.1, 10.2).
Formation of the high conductivity region may be omitted by using Schottky barrier or impurity doped material for the contact electrodes (12.1, 12.2).

REFERENCES:
patent: 3735482 (1973-05-01), Norris et al.
patent: 3848328 (1974-11-01), Ando et al.
patent: 3967981 (1976-07-01), Yamazaki
patent: 4102733 (1978-07-01), De La Moneda et al.
patent: 4268952 (1981-05-01), Gaensslen et al.
Nishimatsu et al., Jpn. J. of Appl. Physics, vol. 16 (1977), Suppl. 16-1, pp. 179-183.

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