Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal
Reexamination Certificate
2006-04-11
2006-04-11
Deo, Duy-Vu N. (Department: 1765)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
C438S052000, C438S053000, C438S107000, C438S108000, C438S110000
Reexamination Certificate
active
07026184
ABSTRACT:
Methods of fabricating micromachined devices are disclosed, as are micromachined (MEMS) devices fabricated using such methods. According to one embodiment, the method includes forming a composite thin film layer stack on a substrate such that composite thin film layer stack comprises a plurality of etch-resistant layers, directionally etching a first portion of the composite thin film layer stack selectively masked by a first etch-resistant layer thereof, and directionally etching a first portion of the substrate selectively masked by the first etch-resistant layer. These steps may result in the formation of a composite thin film microstructure. The method further includes isotropically etching a second portion of the substrate for a controlled period of time to remove substrate material from under the composite thin film microstructure, removing a portion of the first etch-resistant layer and directionally etching a second portion of the composite thin film layer stack selectively masked by a second etch-resistant layer, and directionally etching a third portion of the substrate selectively masked by the second etch-resistant layer to define a second microstructure, the second microstructure comprising a composite thin film layer stack portion and a substrate layer portion. The method may include backside etching the substrate prior to directionally etching the first portion of the composite thin film layer stack and/or removing the composite thin film layer stack portion from the second microstructure after directionally etching the third portion of the substrate. The composite thin film layer stack may include a CMOS circuitry layer stack and the substrate may include single-crystal silicon (SCS).
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Fedder Gary K.
Frey Wilhelm
Pan Zhiyu
Xie Huikai
Carnegie Mellon University
Deo Duy-Vu N.
Kirkpatrick & Lockhart Nicholson & Graham LLP
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