Method of fabricating microphone device and thermal oxide...

Details Method of fabricating microphone device and thermal oxide... Method of fabricating microphone device and thermal oxide...

2006-03-15

2008-11-25

Malsawma, Lex (Department: 2892)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Physical stress responsive

C438S424000

Reexamination Certificate

active

07456043

ABSTRACT:
A substrate is provided and a plurality of trenches are formed in the front surface of the substrate. Then, a thermal oxide layer is formed on inner walls of the trenches and the front surface of the substrate. Subsequently, a first structural layer is formed on the thermal oxide layer, dopants are implanted into the first structural layer, a second structural layer is formed on the first structural layer, and an annealing process is performed to reduce the stress of the first and second structural layers. Following that, the first and second structural layers are patterned to form diaphragms. Finally, the second structural layer is mounted on a support wafer with a bonding layer, and the back surface of the substrate is etched by deep etching techniques to form back chambers corresponding to the diaphragms. Each back chamber has a vertical sidewall and partially exposes the first structural layer.

REFERENCES:
patent: 5889872 (1999-03-01), Sooriakumar et al.
patent: 2005/0012175 (2005-01-01), Tsuruta
patent: 2006/0263990 (2006-11-01), Burke et al.

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